ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 6: NEW MATERIALS, PROCESSES, AND EQUIPMENT (217TH ECS MEETING)

ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 6: NEW MATERIALS, PROCESSES, AND EQUIPMENT (217TH ECS MEETING)

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  • Title: Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment
  • Subtitle: 217th ECS Meeting
  • Date/Location: Held 25-30 April 2010, Vancouver, Canada.
  • Series: ECS Transactions Volume 28 No.01
  • Editor: Gusev, E. P. et al.
  • ISBN: 9781510866713
  • Pages: 412 (1 Vol)
  • Format: Softcover
  • TOC Link: View Table of Contents
  • Publisher: Electrochemical Society (ECS)
  • POD Publisher: Curran Associates, Inc. ( Aug 2018 )

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  • Title: Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment
  • Subtitle: 217th ECS Meeting
  • Date/Location: Held 25-30 April 2010, Vancouver, Canada.
  • Series: ECS Transactions Volume 28 No.01
  • Editor: Gusev, E. P. et al.
  • ISBN: 9781510866713
  • Pages: 412 (1 Vol)
  • Format: Softcover
  • TOC Link: View Table of Contents
  • Publisher: Electrochemical Society (ECS)
  • POD Publisher: Curran Associates, Inc. ( Aug 2018 )