Details
- Title: Physics and Technology of High-k Gate Dielectrics 4
- Subtitle: 210th ECS Meeting
- Date/Location: Held 30 October - 2 November 2006, Cancun, Mexico.
- Series: ECS Transactions Volume 3 No.03
- Editor: Kar, S. et al.
- ISBN: 9781510866515
- Pages: 547 (1 Vol)
- Format: Softcover
- TOC Link: View Table of Contents
- Publisher: Electrochemical Society (ECS)
- POD Publisher: Curran Associates, Inc. ( Aug 2018 )
Description
Members/Attendees
Tab 4
- Title: Physics and Technology of High-k Gate Dielectrics 4
- Subtitle: 210th ECS Meeting
- Date/Location: Held 30 October - 2 November 2006, Cancun, Mexico.
- Series: ECS Transactions Volume 3 No.03
- Editor: Kar, S. et al.
- ISBN: 9781510866515
- Pages: 547 (1 Vol)
- Format: Softcover
- TOC Link: View Table of Contents
- Publisher: Electrochemical Society (ECS)
- POD Publisher: Curran Associates, Inc. ( Aug 2018 )